Strain engineering band gap, effective mass and anisotropic Dirac-like cone in monolayer arsenene: AIP Advances: Vol 6, No 3
High-harmonic generation from an atomically thin semiconductor | Nature Physics
Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications | Light: Science & Applications
Atomically thin p–n junctions with van der Waals heterointerfaces | Nature Nanotechnology
PDF) Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
Photoconversion efficiency in atomically thin TMDC-based heterostructures
PDF] Stability of direct band gap under mechanical strains for monolayer MoS2, MoSe2, WS2 and WSe2 | Semantic Scholar
PDF] Atomically thin MoS₂: a new direct-gap semiconductor. | Semantic Scholar
Color online) Electronic band structure and corresponding total and... | Download Scientific Diagram
Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures | Scientific Reports
Excitons in atomically thin 2D semiconductors and their applications
Transition metal dichalcogenide monolayers - Wikipedia
Band structure of MoS2 (A) showing the direct and indirect band gap, as... | Download Scientific Diagram
PDF) Atomically Thin MoS 2 : A New Direct-Gap Semiconductor
PDF] Direct Observation of the Band Gap Transition in Atomically Thin ReS2. | Semantic Scholar
The fabrication of atomically thin-MoS2 based photoanodes for photoelectrochemical energy conversion and environment remediation: A review - ScienceDirect
Atomic–layer–confined multiple quantum wells enabled by monolithic bandgap engineering of transition metal dichalcogenides
Directly visualizing the momentum-forbidden dark excitons and their dynamics in atomically thin semiconductors
Direct bandgap engineering with local biaxial strain in few-layer MoS2 bubbles | SpringerLink